شبیه سازی رفتار فرکانسی الکترون single electron transistors (sets) در فرکانسهای رادیویی و صوتی

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Single Electron Transistors

Nanotechnology is ushering in the era of self-replicating machinery and self-assembling consumer goods made from raw atoms. Utilizing the well understood properties of atoms & molecules, nanotechnology proposes the construction of novel molecular devices possessing extraordinary properties. The single electron transistor or SET is a new type of switching device that uses controlled electron tun...

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Single electron transistors pdf

Single-electron transistors SETs are often discussed as elements. A single-electron transistor consists of a small conducting island coupled to source and.Single-electron transistor SET is a key element in our research field where. Figure 2: Transfer of electrons is a one-by-one in Single Electron Transistor.Nanoelectronics Single-electron transistor Coulomb blockade, Coulomb. Single Electron T...

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An Analytic Model for Kink Effect in I-V Characteristics of Single Electron Transistors

In this paper, we have investigated the effects of asymmetry in the source and drain capacitance of metallic island single electron transistors. By comparing the source and drain Fermi levels, in the ground and source referenced biasing configurations, with the island’s discrete charging energy levels for various gate voltages, we have derived a set of closed form equations for the device thres...

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Quantum criticality in ferromagnetic single-electron transistors.

Considerable evidence exists for the failure of the traditional theory of quantum critical points, pointing to the need to incorporate novel excitations. The destruction of Kondo entanglement and the concomitant critical Kondo effect may underlie these emergent excitations in heavy fermion metals (a prototype system for quantum criticality), but the effect remains poorly understood. Here, we sh...

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Spin effects in ferromagnetic single-electron transistors

Electron tunneling in ferromagnetic single-electron transistors is considered theoretically in the sequential tunneling regime. A new formalism is developed, which operates in a two-dimensional space of states, instead of one-dimensional space used in the spinless case. It is shown that spin fluctuations can be significantly larger than the charge fluctuations. The influence of discrete energy ...

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